Robert A. Stevenson,Xiaohong Tang,William C. Thiebolt,Christine A. Frysz,Keith W. Seitz,Richard L. Brendel,Thomas Marzano,Jason Woods,Dominick J. Frustaci,Steven W. Winn
申请号：
US16708881
公开号：
US20200121935A1
申请日:
2019.12.10
申请国别(地区):
US
年份:
2020
代理人:
摘要：
A method for making a dielectric substrate configured for incorporation into a hermetically sealed feedthrough is described. The method includes forming a via hole through a green-state dielectric substrate. A platinum-containing paste is filled into at least 90% of the volume of the via hole. The green-state dielectric substrate is then subjected to a heating protocol including: a binder bake-out heating portion performed at a temperature ranging from about 400° C. to about 700° C. for a minimum of 4 hours； a sintering heating portion performed at a temperature ranging from about 1,400° C. to about 1,900° C. for up to 6 hours； and a cool down portion at a rate of up to 5°/minute from a maximum sintering temperature down to about 1,000° C., then naturally to room temperature. The thusly manufacture dielectric substrate is then positioned in an opening in a ferrule that is configured to be attached to a metal housing of an active implantable medical device. The dielectric substrate is hermetically sealed to the ferrule with the sintered platinum material in the via hole providing a conductive pathway from a body fluid side to a device side of the ferrule.
