A gas processing apparatus of an embodiment has stacks, gas flow paths, an AC power supply, and a flow limiter. The stacks are away from each other and in parallel. Each stack includes a dielectric substrate and a first to a third electrode. The first and second electrodes are respectively disposed on the first and second main surfaces of the dielectric substrate. The third electrode is disposed inside the dielectric substrates. The gas flow paths supply a target gas between the stacks, The AC power supply applies an AC voltage across the first and second electrodes and the third electrodes, so as to generate plasma induced flows of the target gas between the dielectric substrates. The flow limiter is disposed on a downstream side of the stacks and limits a flow rate of the target gas.
