Michihide Ozawa,Kiyoshi Yamauchi,Yuji Sutou,Takamitsu Takagi,Shuzou Yamashita,Kouji Mori
申请号：
US11915130
公开号：
US09205178B2
申请日:
2006.05.23
申请国别(地区):
US
年份:
2015
代理人:
摘要：
A Ti—Ni—Nb alloy device is provided which is a shape memory device excellent in response characteristics. The Ti—Ni—Nb alloy device is made of a Ti—Ni—Nb alloy which finishes transformation at a temperature lower than 10° C. after start of reverse transformation.
