A high voltage switching and control circuit is provided for an implantable medical device (IMD). The circuit includes a high voltage positive (HVP) node, configured to receive a positive high voltage signal from a high energy storage source, and a high voltage negative (HVN) node, configured to receive a negative high voltage signal from a high energy storage source. Additionally, the circuit includes first, second and third output terminals that are configured to be connected to electrodes for delivering high voltage energy. First and second SCR switches are connected to the first and second output terminals, respectively. The first and second SCR switches are connected in series with one another and are connected to one of the HVP and HVN nodes. The first and second SCR switches have gating terminals. A control circuit is connected to the gating terminals and delivers first and second gating signals to turn ON the first and second SCR switches, respectively. The control circuit temporally offsets the first and second gating signals to turn ON the first and second SCR switches in a serial delayed manner.
