PROBLEM TO BE SOLVED: To provide a manufacturing method of an X-ray image capturing element capable of suppressing deviation between a light-emission wave length of a scintillator and a detection wavelength of a photodiode by subjecting a photoelectric conversion film to annealing treatment according to light-emission characteristics of a fluorescent material, thereby diagnosing a patient at little radiation exposure dose.SOLUTION: The manufacturing method of an X-ray image capturing element includes: a TFT circuit layer forming step of forming a TFT circuit layer on an upper layer of a support substrate a photoelectric conversion film forming step of forming a photoelectric conversion film formed of a photodiode that converts visible light into an electric signal, on the upper layer of the TFT circuit an annealing treatment step of subjecting the photoelectric conversion film to annealing treatment according to light-emission characteristics of a fluorescent material and a fluorescent-body layer forming step of forming a fluorescent body layer formed of the fluorescent material for converting the X ray into visible light, on the upper layer of the photoelectric conversion film.SELECTED DRAWING: Figure 11COPYRIGHT: (C)2017,JPO&INPIT【課題】光電変換膜に蛍光材料の発光特性に応じたアニール処理を施すことにより、シンチレータの発光波長とフォトダイオードの検出波長とのずれを抑制することができ、よって少ない放射線被曝線量で患者を診断することができるX線撮像素子の製造方法を提供する。【解決手段】支持基板の上層にTFT回路層を形成するTFT回路層形成ステップと、TFT回路の上層に可視光を電気信号に変換するフォトダイオードからなる光電変換膜を形成する光電変換膜形成ステップと、光電変換膜に蛍光材料の発光特性に応じたアニール処理を施すアニール処理ステップと、光電変換膜の上層にX線を可視光に変換する蛍光材料からなる蛍光体層を形成する蛍光体層形成ステップと、を含む。【選択図】図11
