Jonathan M. Rothberg,Keith G. Fife,Nevada J. Sanchez,Susan A. Alie
申请号：
US15865774
公开号：
US20180130795A1
申请日:
2018.01.09
申请国别(地区):
US
年份:
2018
代理人:
摘要：
Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.
