金属酸化物含有半導体層の製造方法及び電子デバイス

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专利权人:

三菱化学株式会社

发明人:

大坪 才華,荒牧 晋司,山崎 正典,山内 律子,武井 出,横山 孝理,佐藤 佳晴

申请号：

JP20140518729

公开号：

JP6131949(B2)

申请日:

2013.05.30

申请国别(地区):

日本

年份:

2017

代理人:

摘要：

A method for producing a semiconductor layer containing a metal oxide, which comprises: coating an ink containing a metal salt of unsaturated carboxylic acid represented by the formula (I) on a base material; and conducting a heat treatment after the coating (In the formula (I), R 1 , R 2 and R 3 are each independently hydrogen atom or an arbitrary substituent, M is an m-valent metal atom, and m is an integer of 2 to 5, and m "CR 1 R 2 =CR 3 -COO - "s may be the same as or different from each other).

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/