An implantable leadless cardiac pacemaker with at least one capacitive electrode and an embedded anti-parallel Schottky junction. The leadless pacemaker can include a bonded semiconductor die, depositing a metal layer, an oxide layer, an insulating layer, and/or a conductive layer over at least a portion of the leadless pacemaker case. Some embodiments can include attaching an n-type silicon ("Si") die to a portion of the pacemaker case. With the various configurations, a Schottky junction can be formed with the n-type Si die, which can be used to limit current flow in one direction and provide protection from external defibrillation pulses.
