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PRESSURE SENSING ELEMENT HAVING AN INSULATING LAYER WITH AN INCREASED HEIGHT FROM THE SUBSTRATE TOWARDS THE OPENING
专利权人:
NIPPON MEKTRON; LTD.
发明人:
Masayuki Iwase,Keizo Toyama,Kazuyuki Ozaki,Hirokazu Ohdate,Taisuke Kimura,Ryoichi Toyoshima
申请号:
US14769290
公开号:
US20160363491A1
申请日:
2015.01.14
申请国别(地区):
US
年份:
2016
代理人:
摘要:
A pressure sensing element (100) includes a support substrate (11); a sensor electrode (12) supported by the support substrate (11); a pressure sensing film (14) functionalized to be electro-conductive, at least in a portion thereof faced to the sensor electrode (12); and an insulating layer (13) which keeps the sensor electrode (12) and the pressure sensing film (14) apart from each other by a predetermined distance A, and has formed therein an opening (20) in which the sensor electrode (12) is exposed to the pressure sensing film (14), the insulating layer (13) having an aperture wall (13b) which partitions the opening (20), and an aperture end (top aperture end (13a)) faced to the pressure sensing film (14), and the insulating layer (13) being increased in height, measured from the support substrate (11), continuously towards the opening (20).
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中国工程科技知识中心
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