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Radiation-Hardened Power Supply and Fabricating Method Thereof
专利权人:
김용조
发明人:
김용조
申请号:
KR1020160132649
公开号:
KR1018785610000B1
申请日:
2016.10.13
申请国别(地区):
KR
年份:
2018
代理人:
摘要:
The present invention relates to a power supply for electronic equipment operating in a high radiation area where normal operation is to be ensured even at an absorbed dose of 10 4 Gy or more. This invention reduces the intensity of radiation incident on a part of a radiation- Thereby improving durability. In order to improve the radiation performance, it is necessary to use a semiconductor device having excellent radiation characteristics and a circuit configuration on the printed circuit board and to arrange the device on the printed circuit board in order to protect the radiation- . In addition, in order to be used in a nuclear power plant, a power supply circuit is constructed using a power supply component that does not use aluminum, which is a prohibited material by design. The present invention protects a device by attenuating radiation by a triple shielding structure in the order of an enclosure, a transformer, and a heat sink, and simultaneously has a radiation protection performance against a total ionization dose (TID) and a single event (SEE) phenomenon. Therefore, it can be used as a power source having excellent radiation resistance without shortening the life span even in applications such as spacecraft, aircraft, and missile, where the charged particles induce SEE phenomenon. More specifically, in the present invention, a plurality of capacitors made of a material resistant to radiation other than an aluminum electrolytic capacitor, instead of aluminum electrolytic capacitors, are formed in series-parallel circuits to replace a capacitor of a large capacity, and a regulator IC susceptible to radiation is disposed on the rear surface of the transformer And invented a simple, radiation-resistant power supply that can expect radiation shielding effects by an iron core.본 발명은 104 Gy 이상의 흡수 선량에서도 정상적인 동작이 보장되어야 하는 고방사선 지역에서 작동하는 전자장비의 파워 서플라이에 대한 발명이며, 방사선에 약한 CMOS 구조의 부품에 입사하는 방사선의 강도를 약화시켜 회로의 내구성을 향상시키는 것을 특징으로 한다. 내방사선 성능을 향상시키기 위해 회로를 구성하는 부품을 내방사선 특성
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/
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