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IMPLANTABLE SYSTEM WITH IMPROVED RF TOLERANCE
专利权人:
BOSTON SCIENTIFIC NEUROMODULATION CORPORATION
发明人:
Rafael Carbunaru,Salomo Murtonen
申请号:
US13712779
公开号:
US20130150938A1
申请日:
2012.12.12
申请国别(地区):
US
年份:
2013
代理人:
摘要:
One embodiment is an implantable lead including a lead body having a proximal end and a distal end multiple electrodes disposed along the distal end of the lead body multiple terminal contacts disposed along the proximal end of the lead body multiple stimulation conductors extending along the lead body and electrically coupling the electrodes to the terminal contacts at least one diversionary terminal contact disposed along the proximal end of the lead body and at least one diversionary conductor extending at least partially along the length of the lead body and coupled to the at least one diversionary terminal contact and not coupled to any of the electrodes. The at least one diversionary conductor is configured and arranged to capacitively couple to the stimulation conductors.
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