A biomedical stimulation protection device includes a current source, a first upper P-channel metal oxide semiconductor field effect transistor (PMOSFET), a first adaptive bias circuit, and six first stimulating metal oxide semiconductor field effect transistors (MOSFETs). The first adaptive bias circuit receives a power voltage (VDD), a double power voltage (2VDD), and a triple power voltage (3VDD). The first upper MOSFET and the first stimulating MOSFETs are electrically cascoded with each other. The first adaptive bias circuit turns on a part of the first stimulating MOSFETs according to VDD, 2VDD, and 3VDD, so as to stimulate a physiological tissue and control a voltage difference between two terminals of each of the first upper MOSFET and the first stimulating MOSFETs to be less than or equal to VDD.本發明係揭露一種生醫刺激保護裝置，包含一電流源、一第一上P通道金氧半場效電晶體、一第一自適應偏壓電路與六第一刺激式金氧半場效電晶體。第一自適應偏壓電路接收一倍電源電壓(VDD)、二倍電源電壓(2VDD)與三倍電源電壓(3VDD)。第一刺激式金氧半場效電晶體與第一上P通道金氧半場效電晶體互相電性疊接。第一自適應偏壓電路依據VDD、2VDD與3VDD導通部分的第一刺激式金氧半場效電晶體，以刺激生理組織，並控制第一上P通道金氧半場效電晶體與第一刺激式金氧半場效電晶體之每一者的二端的電壓差小於或等於VDD，以有效防止高壓破壞生醫刺激保護裝置。
