SEO, NORIYOSHI,MATSUMURA, ATSUSHI,TAKEUCHI, RYOUICHI
申请号：
EP10750496
公开号：
EP2408026A4
申请日:
2010.02.24
申请国别(地区):
EP
年份:
2014
代理人:
摘要：
An epitaxial wafer for a light emitting diode, including a GaAs substrate, a light emitting unit provided on the GaAs substrate, and a strain adjustment layer provided on the light emitting unit, wherein the light emitting unit has a strained light emitting layer having a composition formula of (AlXGa1-X)YIn2-YP (wherein X and Y are numerical values that satisfy 0≤X≤0.1 and 0.39≤Y≤0.45 respectively), and the strain adjustment layer is transparent to the emission wavelength and has a lattice constant that is smaller than the lattice constant of the GaAs substrate. The invention provides an epitaxial wafer that enables mass production of a high-output and/or high-efficiency LED having an emission wavelength of not less than 655 nm.
