The thermal energy treatment device 1 includes an insulating substrate having a longitudinal axis, a heat generating portion which is provided in the insulating substrate and whose resistance value per unit length in the longitudinal direction is a first resistance value, and which generates heat by energization , A heating element 922 having a resistance value per unit length in the longitudinal direction which is a second resistance value smaller than the first resistance value and which is conducted to the heating section, A state determination section 332 for determining the state of the connection section based on the index value and an output restriction section 333 for limiting an output value to be supplied to the heat generation section based on the determination result by the state determination section 332.熱エネルギ処置装置1は、長手軸を有する絶縁性基板と、絶縁性基板に設けられ、長手軸方向の単位長さあたりの抵抗値が第1の抵抗値であり、通電により発熱する発熱部と、長手軸方向の単位長さあたりの抵抗値が第1の抵抗値より小さい第2の抵抗値であり、当該発熱部に導通する接続部と、を有する発熱体922と、接続部の温度の指標値に基づいて、接続部の状態を判定する状態判定部332と、状態判定部332による判定結果に基づいて、発熱部に通電する出力値を制限する出力制限部333とを備える。
