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基準電位生成回路
专利权人:
株式会社半導体エネルギー研究所
发明人:
渡邉 一徳
申请号:
JP20120271908
公开号:
JP6108808(B2)
申请日:
2012.12.13
申请国别(地区):
日本
年份:
2017
代理人:
摘要:
A reference potential generation circuit is provided. The reference potential generation circuit includes first to third input terminals, first and second output terminals, a low-pass filter including first to third terminals, and a linear regulator including first to fourth terminals. In the reference potential generation circuit, the first terminal of the low-pass filter is electrically connected to the second input terminal. The second terminal of the low-pass filter is electrically connected to the first input terminal or the third input terminal The third terminal of the low-pass filter is electrically connected to the first terminal of the linear regulator. The second terminal of the linear regulator is electrically connected to the first input terminal and the first output terminal. The third terminal of the linear regulator is electrically connected to the second output terminal. The fourth terminal of the linear regulator is electrically connected to the third input terminal.
来源网站:
中国工程科技知识中心
来源网址:
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