MILIND S KULKARNI,PUNEET GUPTA,BALAJI DEVULAPALLI,JASMEEL IBRAHIM,VITHAL REVANKAR,KWASI FOLI
申请号：
IN8085/DELNP/2010
公开号：
IN2010DN08085A
申请日:
2010.11.16
申请国别(地区):
IN
年份:
2012
代理人:
摘要：
feeding a carrier gas and a thermally decomposable silicon compound from the source of gas though the distribution openings of the distributor and into the reaction chamber, wherein the concentration of carrier gas in the gas fed through the peripheral openings exceeds the concentration of carrier gas in the gas fed through the central openings to reduce the amount of silicon which deposits on the reactor wall and contacting silicon particles with the thermally decomposable silicon compound in the reaction chamber to cause silicon to deposit onto the silicon particles and increase in size.
