POINTS QUANTIQUES A ALLIAGE DE SEMI-CONDUCTEURS ET POINTS QUANTIQUES A ALLIAGE A GRADIENT DE CONCENTRATION, SERIES COMPRENANT CES POINTS QUANTIQUES ET PROCEDES ASSOCIES
Indiana University Research and Technology Corporation
发明人:
申请号：
EP04750826.2
公开号：
EP1627420B1
申请日:
2004.04.28
申请国别(地区):
EP
年份:
2020
代理人:
摘要：
An alloyed semiconductor quantum dot comprising an alloy of at least two semiconductors, wherein the quantum dot has a homogeneous composition and is characterized by a band gap energy that is non-linearly related to the molar ratio of the at least two semiconductors； a series of alloyed semiconductor quantum dots related thereto； a concentration-gradient quantum dot comprising an alloy of a first semiconductor and a second semiconductor, wherein the concentration of the first semiconductor gradually increases from the core of the quantum dot to the surface of the quantum dot and the concentration of the second semiconductor gradually decreases from the core of the quantum dot to the surface of the quantum dot； a series of concentration-gradient quantum dots related thereto； in vitro and in vivo methods of use； and methods of producing the alloyed semiconductor and concentration-gradient quantum dots and the series of quantum dots related thereto.
