インプラントの製造方法
- 专利权人:
- 国立大学法人広島大学
- 发明人:
- 牧平 清超,二川 浩樹,峯 裕一,岡本 圭司,阿部 義紀,中谷 達行,新田 祐樹
- 申请号：
- JP2009197100
- 公开号：
- JP5403542B2
- 申请日:
- 2009.08.27
- 申请国别(地区):
- JP
- 年份:
- 2014
- 代理人:
- 摘要：
PROBLEM TO BE SOLVED: To provide an implant material which suppresses osteoclast induction and promotes differentiation to osteoblast.
SOLUTION: The implant material includes a substrate 10, and a carbonaceous thin film 20 formed on the surface of the substrate 10. The carbonaceous thin film 20 contains at least one selected from an oxygen-containing functional group and a nitrogen-containing functional group. The abundance ratio of the oxygen-containing functional group is not more than 4% and the ratio of the abundance ratio of the nitrogen-containing functional group to the abundance ratio of the oxygen-containing functional group is not more than 10.
COPYRIGHT: (C)2011,JPO&INPIT
- 来源网站：
- 中国工程科技知识中心
