Yong Hee KIM,Sang-Don JUNG,Gook Hwa KIM,Ah Young KIM
申请号：
US15065755
公开号：
US20160270680A1
申请日:
2016.03.09
申请国别(地区):
US
年份:
2016
代理人:
摘要：
Disclosed are a neural electrode for measuring a neural signal and a method for manufacturing the same. In the method, an indium tin oxide (ITO) electrode is formed on a substrate, an insulative passivation layer is formed on the substrate and the ITO electrode to expose a portion of the ITO electrode, and ITO nanorods are formed on the portion of the ITO electrode and the insulative passivation layer. Accordingly, it is possible to reduce electrical noise and improve a neurotrophic property by using the existing process.
