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Solid solution inducing layer for weak epitaxy growth of non-planar phthalocyanine
专利权人:
Donghang Yan
发明人:
Donghang Yan,Yanhou Geng,Hongkun Tian,Lizhen Huang,Jianfeng Shen,Xiaodong Guo
申请号:
US13187217
公开号:
US08598151B2
申请日:
2011.07.20
申请国别(地区):
US
年份:
2013
代理人:
摘要:
The present invention relates to solid solution inducing layer for the preparation of weak epitaxial films of non-planar phthalocyanine and the thin film of non-planar phthalocyanine generated from the weak epitaxial growth on the solid solution inducing layer and organic thin film transistor based on the weak rpitaxy growth thin film of non-planar phthalocyanine. The solid solution inducing layer is prepared at certain substrate temperature by vapor co-deposition of any two inducing layer molecules presented by Formula I and Formula II.The solid solution inducing layer has uniformed structure, of which the lattice parameter and electronic structure can be controlled by adjusting the component proportion, the solid solution inducing layer can epitaxially grow a high quality thin film of non-planar phthalocyanine and fabricate high performance transistor device based on such epitaxial thin film.
来源网站:
中国工程科技知识中心
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http://www.ckcest.cn/home/

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