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Hermetic implantable sensor
专利权人:
Joseph Y. Lucisano;Mark B. Catlin
发明人:
Joseph Y. Lucisano,Mark B. Catlin
申请号:
US13024209
公开号:
US10041897B2
申请日:
2011.02.09
申请国别(地区):
US
年份:
2018
代理人:
摘要:
At least one conductor is formed at a preselected location on a substrate made of a first insulating material having a high temperature resistance. The conductor is made from a solidified electrically conductive thick film material. A coating made of a second insulating material is formed over the substrate to hermetically seal at least a portion of the conductor. An exposed distal region of the conductor provides a detection electrode. The conductor has a reduced porosity that inhibits migration of fluid or constituents thereof through the conductor.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/
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