Provided are: a phase-shift mask which is a large-sized photomask that enables the exposure of a large-sized area to light and has a constitution suitable for the formation of a fine pattern; and a method for producing the phase-shift mask. A large-sized phase-shift mask is produced, which can be produced easily and enables the transfer of a fine pattern. The large-sized phase-shift mask has such a constitution that a light-shielding film contains chromium or a chromium compound as the main component, a phase-shift film contains chromium oxide or oxidized chromium nitride as the main component, and the phase-shift film is laminated on the light-shielding film in the light-shielding area. The reflectance of the light-shielding area can be reduced by employing such a constitution that an anti-reflective film comprising a chromium compound is additionally provided between the light-shielding film and the phase-shift film.
