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Silicon Breast Implant Which Minimizes Stress Concentration And Method For Manufacturing Same
专利权人:
Won Seok Yu
发明人:
Won Seok Yu
申请号:
US14116417
公开号:
US20140107779A1
申请日:
2012.05.08
申请国别(地区):
US
年份:
2014
代理人:
摘要:
The present invention relates to a silicon breast implant which minimizes stress concentration applied thereto after being inserted into the human body to maximize the resistance of same to fatigue-induced rupture, thereby improving the durability of the implant. The breast implant may include an elegant patch-adhesion portion having a thin thickness so as to provide superior overall feel and improve the appearance of the product. Further, the breast implant has a silicon shell defining an outer wall thereof and the patch adhesion portion for closing, from the outside, a hole formed in a bottom surface of the silicon shell so that the patch adhesion portion is increased in strength to maximize adhesion durability, safety of use, and effectiveness. The silicon shell has a uniform overall thickness, and the patch adhesion portion comprises a patch hole through which a patch adheres to a lower end of the silicon shell using an adhesive material.
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