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Level shifter circuit for gate driving of gate control device
专利权人:
UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA;INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERING OF UESTC IN GUANGDONG
发明人:
Li Zehong,Zeng Xiao,Wu Yuzhou,Wan Jiali
申请号:
US201815960573
公开号:
US10158350(B1)
申请日:
2018.04.24
申请国别(地区):
美国
年份:
2018
代理人:
Bayramoglu Gokalp
摘要:
The double pulse generator of the level shifter circuit takes out the rising edge and falling edge of the pulse width modulation signal PWM_H and generates corresponding narrow pulse signals. The two narrow pulse signals respectively pass through the pulse shaper to control the two field effect transistors in the switching circuit. The pulse width of the narrow pulse signal is not enough to completely switch on the two field effect transistors, so the generated waveform is a sawtooth wave; the drains of the two field effect transistors are respectively connected to the hysteresis-adjustable Schmidt trigger to restore the narrow pulse signal to the rising edge and falling edge pulse signal of the pulse width modulation signal PWM_HS with respect to the floating side VS, and then the signal is restored to the level-shifted pulse width modulation signal PWM HS after passing through the RS latch.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/
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