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CAPTEURS D'IMPLANT FERMÉS HERMÉTIQUEMENT AYANT UNE ARCHITECTURE D'EMPILEMENT VERTICAL
专利权人:
INJECTSENSE; INC.
发明人:
申请号:
EP15814813.0
公开号:
EP3164059A4
申请日:
2015.07.01
申请国别(地区):
EP
年份:
2018
代理人:
摘要:
The present invention describes vertically stacked and hermetically sealed implantable pressure sensor devices for measuring a physiological signal. The implantable device comprises multiple layers, including a first wafer having a pressure sensor configured to measure the physiological signal and a second wafer having at least a digitizing integrated circuit. The first wafer is vertically stacked or disposed over the second wafer so as to form a hermetic seal. The device may include one or more additional layers adapted for energy storage and transfer, such as a third layer having a super-capacitor and a fourth layer having a thin film battery.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/
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