Hebert Francois,Lee Seong Woo,Jeong Jong Yeul,An Hee Baeg,Shin Kang Sup,Choe Seong Min,Kim Young Joon
申请号：
US201414471678
公开号：
US10003013(B2)
申请日:
2014.08.28
申请国别(地区):
美国
年份:
2018
代理人:
NSIP Law
摘要：
A semiconductor device including a circuitry, a magnetic sensor, and a buried oxide. The circuitry is formed on a substrate. The magnetic sensor has a sensing area formed under the circuitry. The buried oxide is disposed between the circuitry and the magnetic sensor. The sensing are comprises an N-doped area and a P-doped area doped deeper than the N-doped area, and sensor contacts connect the sensing area with the circuitry through the buried oxide.
