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Methods and apparatus for simulating interaction of radiation with structures, metrology methods and apparatus, device manufacturing method
专利权人:
ASML Netherlands B.V.
发明人:
Pisarenco Maxim,Quintanilha Richard,Van Kraaij Markus Gerardus Martinus Maria
申请号:
US201615285051
公开号:
US10146140(B2)
申请日:
2016.10.04
申请国别(地区):
美国
年份:
2018
代理人:
Sterne, Kessler, Goldstein & Fox P.L.L.C.
摘要:
A structure of interest is irradiated with radiation for example in the x-ray or EUV waveband, and scattered radiation is detected by a detector (306). A processor (308) calculates a property such as linewidth (CD) by simulating interaction of radiation with a structure and comparing the simulated interaction with the detected radiation. A layered structure model (600, 610) is used to represent the structure in a numerical method. The structure model defines for each layer of the structure a homogeneous background permittivity and for at least one layer a non-homogeneous contrast permittivity. The method uses Maxwell's equation in Born approximation, whereby a product of the contrast permittivity and the total field is approximated by a product of the contrast permittivity and the background field. A computation complexity is reduced by several orders of magnitude compared with known methods.
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中国工程科技知识中心
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