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Lateral silicon nanospikes fabricated using metal-assisted chemical etching
专利权人:
发明人:
Stacey M. Gifford,Huan Hu,Pablo Meyer Rojas,Joshua T. Smith
申请号:
US15091074
公开号:
US09775339B1
申请日:
2016.04.05
申请国别(地区):
US
年份:
2017
代理人:
摘要:
The present disclosure relates to methods for forming an antimicrobial nanostructure and antimicrobial articles. The methods may include: providing a master template of a layout of the antimicrobial nanostructure on a silicon substrate, depositing a silicon nitride layer on a top surface of the silicon substrate, forming a patterned lithographic resist mask layer on a top surface of the silicon nitride layer, generating certain silicon pillars according to the patterned lithographic resist mask using a resist and reactive ion etching, forming certain lateral silicon nanospikes on the silicon pillars by performing metal assisted chemical etching (MacEtch), and removing the silicon nitride layer and bonding a top cover glass on the silicon pillars to form the antimicrobial nanostructure having lateral silicon nanospikes. The antimicrobial article may include a component of an electronic device, a biomedical article, a household product, a food grade article, a transportation component, or a public building component.
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