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Low Dissolution Rate Device and Method
专利权人:
The Government of the United States of America; as represented by the Secretary of the Navy
发明人:
Francis J. Kub,Charles R. Eddy, JR.,Virginia D. Wheeler
申请号:
US14928318
公开号:
US20160120472A1
申请日:
2015.10.30
申请国别(地区):
US
年份:
2016
代理人:
摘要:
An implantable device includes a circuit protected with a low dissolution rate layer, wherein the circuit is either (a) fully encapsulated by the low dissolution rate layer and configured for non-electrical conduction contact sensing (e.g., capacitive sensing) or (b) partially encapsulated by the low dissolution rate layer with an electrode at least partially exposed outside the layer; wherein the implantable device is suitable for implantation inside the body of a living animal; and wherein the low dissolution rate layer comprises an element selected from the group consisting of gallium, boron, nitrogen, oxygen, zirconium, aluminum, and titanium. Such devices can be made by lithographic and other means, with coating layers applied by atomic layer deposition.
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