In a radiation detector (11) in which scintillator layers (21) are directly formed on all the light receiving parts (19) of a plurality of photoelectric conversion substrates (14), space (S) and level difference (D) between the adjacent photoelectric conversion substrates are determined so that the effects of these space (S) and level difference (D) fall within a range corresponding to the effect of one photoelectric conversion element. Specifically, the space S between the adjacent photoelectric conversion substrates (14) is equal to or less than 133 µm and the level difference D between the adjacent photoelectric conversion substrates (14) is equal to or less than 100 µm. Accordingly, the scintillator layers (21) can be directly formed on all the light receiving parts (19) of the plurality of photoelectric conversion substrates (14). This prevents degradation in MTF and sensitivity and reduces manufacturing costs.