Process for the removal of contaminants from sputtering target substrates

• 收藏
• 分享

专利权人:

SCI ENGINEERED MATERIALS, INC.

发明人:

Young Jeremy R.

申请号：

US201715422666

公开号：

US10138545(B2)

申请日:

2017.02.02

申请国别(地区):

美国

年份:

2018

代理人:

Hudak, Shunk & Farine Co., LPA

摘要：

The present invention provides a process for the removal of contaminants on a spent sputtering target used in Plasma Vapor Deposition by the steps of grit abrasion, organic solvent cleaning, and being subjected to an electric field in an acidic bath including a surfactant, and followed by subsequent water and air rinse and further grit abrasion. Removal of the contaminants is verified by spectroscopy.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/