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PRESSURE MEASUREMENT STRUCTURE
专利权人:
发明人:
Jyun-Kai Ciou,Yan-Rung Lin,Chang-Ho Liou,Chang-Yi Chen
申请号:
US13849376
公开号:
US20140130593A1
申请日:
2013.03.22
申请国别(地区):
US
年份:
2014
代理人:
摘要:
A pressure measurement structure includes a first substrate, a second substrate, a first electrode layer, a second electrode layer, at least a piezoresistive layer and a wiring layer. The second substrate faces towards the first substrate. The first electrode layer is disposed on the first substrate and faces towards the second substrate. The second electrode layer is disposed on the second substrate and faces towards the first electrode layer. At least a piezoresistive layer is located between the first electrode layer and the second electrode layer. A wiring layer is disposed on the second substrate and back to the first substrate. The wiring layer includes multiple wires. Part of the wires are electrically connected to the first electrode layer. The other part of the wires are electrically connected to the second electrode layer.
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