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СПОСОБ УПРАВЛЯЕМОГО ВОЗДЕЙСТВИЯ НА БИОЛОГИЧЕСКИЙ ОБЪЕКТ ЭЛЕКТРОМАГНИТНЫМ ИЗЛУЧЕНИЕМ ПОЛУПРОВОДНИКОВОГО ИНЖЕКЦИОННОГО ГЕНЕРАТОРА (ВАРИАНТЫ)
专利权人:
STEPANENKO VLADIMIR DMITRIEVICH
发明人:
STEPANENKO VLADIMIR DMITRIEVICH,Степаненко Владимир Дмитриевич,STEPANENKO KIRILL VLADIMIROVICH,Степаненко Кирилл Владимирович,KUZNETSOV ANDREJ NIKOLAEVICH,Кузнецов Андрей Николаевич
申请号:
RU2012122579/14
公开号:
RU0002491971C1
申请日:
2012.06.01
申请国别(地区):
RU
年份:
2013
代理人:
摘要:
FIELD: medicine.SUBSTANCE: group of inventions relates to medicine, namely to means of impact with electromagnetic radiation on biological object by electromagnetic irradiation and can be used in field of medicine, biology, veterinary for carrying out wave therapy. In accordance with the first version of the invention claimed is method, which includes radiation of biological objects by electromagnetic irradiation of semiconductor injection generator. Radiation is performed by means of semiconductor injection generator based on A3B5 heterostructure. To perform suppressing impact on oncologic cells radiation is carried out by polarised pulse electromagnetic irradiation with rotation of electromagnetic irradiation vector rightward, frequency of electromagnetic irradiation in the range from 30 to 220 GHz, wavelength of electromagnetic irradiation from 1.4 to 10 mm, power of electromagnetic irradiation from 10-16 W/cm2 to 10-18 W/cm2 for 6-8 minutes. Electromagnetic irradiation is performed by active layer which is placed between located on one side two grown layers of n-type conductivity and on the other side one grown layer of p-type conductivity, on which contact sites from precious electrically conductive metal, preferably gold or platinum, are made. As dopant of n-type Se, Te or Si with concentration of carriers not less than no - 8•1015 cm3, and as dopant of p-type Be, Zn or Cd with concentration of carriers not less than P0 - 9•1018 cm3 are used. In accordance with the second version of the invention, method includes radiation of biological objects by electromagnetic irradiation of semiconductor injection generator. Radiation is performed by means of semiconductor injection generator based on A3B5 heterostructure, and for stimulating impact on oncologic cells radiation is performed by polarised pulse electromagnetic irradiation with rotation of electromagnetic irradiation vector rightward. Electromagnetic irradiation is performed by active layer which is placed be
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