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Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device
专利权人:
Shunpei Yamazaki
发明人:
Shunpei Yamazaki,Miho Komori,Yurika Satou,Kazue Hosoki,Kaori Ogita
申请号:
US12507254
公开号:
US08202238B2
申请日:
2009.07.22
申请国别(地区):
US
年份:
2012
代理人:
摘要:
A thin film integrated circuit which is mass produced at low cost and a method for manufacturing a thin film integrated circuit according to the invention includes the steps of: forming a peel-off layer over a substrate forming a base film over the peel-off layer forming a plurality of thin film integrated circuits over the base film forming a groove at the boundary between the plurality of thin film integrated circuits and introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer thus, the plurality of thin film integrated circuits are separated from each other.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/
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