University of Florida Research Foundation, Inc.;KOREA ELECTRONICS TECHNOLOGY INSTITUTE
发明人:
Kyoung Tae Kim,Yong-Kyu Yoon,Dongsu Kim
申请号：
US16064611
公开号：
US10811197B2
申请日:
2016.12.21
申请国别(地区):
US
年份:
2020
代理人:
摘要：
Various examples are provided for hydrothermally grown BaTiO3, SrTiO3, and BaxSr1−；xTiO3 on TiO2 nanotube layers, which can be used in ultra-high charge density capacitors. In one example, a method includes forming a first anodized titanium oxide (ATO) layer on a layer of titanium by anodization, the first ATO layer having a nanotubular morphology； removing the first ATO layer from the layer of titanium； forming a second ATO layer having a nanotubular morphology on the layer of titanium by anodization； and hydrothermally growing a layer of MTiO3 on a surface of the second ATO layer, where M is Ba, Sr, or BaxSr1−；x. In another example, an ultra-high density charge capacitor includes a first electrode layer； an ATO layer disposed on the first electrode layer； a layer of MTiO3 on a surface of the ATO layer； and a second electrode layer disposed on the layer of MTiO3.
