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Implantable pulse generator for neurostimulation that comprises thin-oxide transistors and method of operating a neurostimulation system
专利权人:
Advanced Neuromodulation Systems; Inc.
发明人:
Black, Daniel J.,Pillai, Sateesh N.
申请号:
AU2012100746
公开号:
AU2012100746A4
申请日:
2012.05.23
申请国别(地区):
AU
年份:
2012
代理人:
摘要:
#$%^&*AU2012100746A420120621.pdf#####09-028 WO IMPLANTABLE PULSE GENERATOR FOR NEUROSTIMULATION THAT COMPRISES THIN-OXIDE GATE CIRCUITRY AND METHOD OF OPERATING A NEUROSTIMULATION SYSTEM ABSTRACT 5 In one embodiment, a method, of operating an IPG, comprises: generating a variable anode voltage by first circuitry to drive current during pulse generation, the first circuitry being programmable to generate the anode voltage from a plurality of voltages in response to a control signal providing the anode voltage to a first circuit node operating a transistor to control current flow between the first 10 circuit node and an output of the IPG, wherein the transistor possesses a gate-tosource breakdown voltage generating a first supply signal that is maintained at a voltage level equal to the anode voltage plus or minus a predetermined amount and selectively applying the first supply signal and a second supply signal to a gate of the transistor to connect or disconnect the first circuit node in a circuit 15 path with the output of the IPG. 19 of 19
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中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/
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