検出装置、及び、検出システム

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专利权人:

キヤノン株式会社

发明人:

渡辺 実,横山 啓吾,大藤 将人,川鍋 潤,藤吉 健太郎,和山 弘

申请号：

JP2013103325

公开号：

JP6164924B2

申请日:

2013.05.15

申请国别(地区):

JP

年份:

2017

代理人:

摘要：

PROBLEM TO BE SOLVED: To provide a detection device capable of achieving both of good adhesion between an impurity semiconductor layer and a pixel electrode and good dark current characteristics of a conversion element, and securing good transfer speed.SOLUTION: In a detection device having a conversion element 12 which has a pixel electrode, an impurity semiconductor layer 123 and a semiconductor layer 124 in order from a substrate 100 side and converts radioactive ray or light into electrical charge, the pixel electrode contains a metal layer 122 having a gap 122 formed in a region overlapping an orthogonal projection of the semiconductor layer 124.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/