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HERMETICALLY SEALED IMPLANT SENSORS WITH VERTICAL STACKING ARCHITECTURE
专利权人:
ARIEL CAO
发明人:
ARIEL CAO
申请号:
US14789839
公开号:
US20160000344A1
申请日:
2015.07.01
申请国别(地区):
US
年份:
2016
代理人:
摘要:
The present invention describes vertically stacked and hermetically sealed implantable pressure sensor devices for measuring a physiological signal. The implantable device comprises multiple layers, including a first wafer having a pressure sensor configured to measure the physiological signal and a second wafer having at least a digitizing integrated circuit. The first wafer is vertically stacked or disposed over the second wafer so as to form a hermetic seal. The device may include one or more additional layers adapted for energy storage and transfer, such as a third layer having a super-capacitor and a fourth layer having a thin film battery.
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