HSU, SHENG HAO,许胜豪,許勝豪,TSENG, WAN YU,曾琬瑜,LIN, LI DEH,林立德,TSAI, FENG YU,蔡丰羽,蔡豐羽,SU, WEI FANG,林唯芳,TSENG, MING HUNG,曾铭宏,曾銘宏,LEE, MING SHU,李明澍,CHEN, MIN HUEY,陈敏慧,陳敏慧
申请号：
TW102138619
公开号：
TW201515668A
申请日:
2013.10.25
申请国别(地区):
TW
年份:
2015
代理人:
摘要：
The present invention relates to a surface treatment method for implants, which comprising: providing an implant； and forming a ceramic layer on the surface of the implant by an atomic layer deposition method, wherein the thickness of the ceramic layer is 5~150 nm； the root mean square roughness of the ceramic layer is increased in a range of 15 nm of less； and the coefficient of friction of the ceramic layer is 0.1~0.5. The ceramic layer formed on the surface of the implant has excellent uniformity and is capable to entirely cover the whole surface of the implant. The ceramic layer formed on the surface of the implant can effectively block the free metal ions dissociating from the implant and perform anti-oxidation and anti-corrosion effect, and can greatly enhance the biocompatibility of the implant.本發明係關於一種植體之表面處理方法，包括：提供一植體；以及使用原子層沉積法(Atomic layer deposition，ALD)形成一陶瓷層於該植體之表面。其中該陶瓷層之厚度範圍為5~150nm；其均方根粗糙度係增加15nm以下；以及其摩擦係數之範圍為0.1~0.5。於植體表面所形成之陶瓷層係具有極佳之均勻性且可完全包覆植體的表面，可有效阻擋由植體游離出的金屬離子，並具有抗氧化以及抗腐蝕的作用，並可大幅提升植體的生物相容性。
