There is provided a semiconductor film, including: an aggregate of oxide microparticles including at least one type of metal selected from the group consisting of In, Zn, and Sn; and at least one type of a ligand which is selected from the group consisting of a ligand expressed by General Formula (A) below, a ligand expressed by General Formula (B) below, and a ligand expressed by General Formula (C) below and which is coordinated with the oxide microparticles: in which, in General Formula (A), each of X1 and X2 independently represents —SH, —NH2, —OH, or —COOH, and each of A1 and B1 independently represents a hydrogen atom or a substituent having an atomic number of 1 to 10, in which, in General Formula (B), each of X3 and X4 independently represents —SH, —NH2, —OH, or —COOH and each of A2 and B2 independently represents a hydrogen atom or a substituent having an atomic number of 1 to 10, and in which, in General Formula (C), X5 represents —SH, —NH2
