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DYNAMIC MEMORY PROTECTION
专利权人:
QUALCOMM Incorporated
发明人:
Chando PARK,Wei-Chuan CHEN,Sungryul KIM,Adam Edward NEWHAM,Seung Hyuk KANG,Rashid Ahmed Akbar ATTAR
申请号:
US15963668
公开号:
US20190332306A1
申请日:
2018.04.26
申请国别(地区):
US
年份:
2019
代理人:
摘要:
Aspects of the present disclosure relate to protecting the contents of memory in an electronic device, and in particular to systems and methods for transferring data between memories of an electronic device in the presence of strong magnetic fields. In one embodiment, a method of protecting data in a memory in an electronic device includes storing data in a first memory in the electronic device; determining, via a magnetic sensor, a strength of an ambient magnetic field; comparing the strength of the ambient magnetic field to a threshold; transferring the data in the first memory to a second memory in the electronic device upon determining that the strength of the ambient magnetic field exceeds the threshold; and transferring the data from the second memory to the first memory upon determining that the strength of the ambient magnetic field no longer exceeds the threshold.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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