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植體電漿鍍膜與分子交聯流程及結構
专利权人:
发明人:
郭惠卿,郭惠卿,林俊彬,林俊彬,廖淑娟,廖淑娟,章浩宏,章浩宏,李志伟,李志偉
申请号:
TW107126193
公开号:
TWI671420B
申请日:
2018.07.27
申请国别(地区):
TW
年份:
2019
代理人:
摘要:
An implant plasma coating and molecular crosslinking process and structure, the implant plasma coating and molecular crosslinking process comprises the steps of: providing a finished implant; decomposing a monomer containing a ruthenium molecule into an ion state (electricity) Pulp), and forming a coating on the surface of the implant; a cross-linking agent capable of covalently bonding with the decyl oxide coating is adhered to the surface of the implant; and the functional molecule is coated on the surface of the cross-linking agent to generate a chemical bond The knot remains on the surface of the implant, thereby completing the implant plasma coating and molecular cross-linking structure.一種植體電漿鍍膜與分子交聯流程及結構,該植體電漿鍍膜與分子交聯流程包含以下步驟:提供一植體成品;將含有矽氧類分子之單體分解為離子狀態(電漿),並其於植體表面形成鍍膜;於植體表面沾附一可與矽氧烷鍍膜產生共價鍵結合之交聯劑;於交聯劑外塗佈功能性分子,使其產生化學鍵結而保留於植體表面,藉此完成植體電漿鍍膜與分子交聯結構。
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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