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Handling beam glitches during ion implantation of workpieces
专利权人:
Russell J. Low
发明人:
Russell J. Low,Atul Gupta,William T. Weaver
申请号:
US13170815
公开号:
US08598547B2
申请日:
2011.06.28
申请国别(地区):
US
年份:
2013
代理人:
摘要:
Glitches during ion implantation of a workpiece, such as a solar cell, can be compensated for. In one instance, a workpiece is implanted during a first pass at a first speed. This first pass results in a region of uneven dose in the workpiece. The workpiece is then implanted during a second pass at a second speed. This second speed is different from the first speed. The second speed may correspond to the entire workpiece or just the region of uneven dose in the workpiece.
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