Handling beam glitches during ion implantation of workpieces

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专利权人:

Russell J. Low

发明人:

Russell J. Low,Atul Gupta,William T. Weaver

申请号：

US13170815

公开号：

US08598547B2

申请日:

2011.06.28

申请国别(地区):

US

年份:

2013

代理人:

摘要：

Glitches during ion implantation of a workpiece, such as a solar cell, can be compensated for. In one instance, a workpiece is implanted during a first pass at a first speed. This first pass results in a region of uneven dose in the workpiece. The workpiece is then implanted during a second pass at a second speed. This second speed is different from the first speed. The second speed may correspond to the entire workpiece or just the region of uneven dose in the workpiece.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/