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Irradiation of at least two target volumes
专利权人:
Christoph Bert
发明人:
Christoph Bert,Eike Rietzel
申请号:
US13125941
公开号:
US08502177B2
申请日:
2009.10.17
申请国别(地区):
US
年份:
2013
代理人:
摘要:
The invention concerns an idea of planning irradiation of two target points (81, 9) with a beam approaching target points (72) for the purpose of depositing a first target dose distribution in a first of the two target volumes (81, 92) and a second target dose distribution in a second of the two target volumes (81, 92). The idea is characterized by the following steps:assigning target points (72) to one of the target volumes (81, 92), detecting an overlap of a first deposition caused by approaching a target point (72) assigned to the first target volume (81, 92) with a second deposition caused by approaching a target point (72) assigned to the second target volume (81, 92), and adapting the planning process for at least one of the target points (72) whose approach contributes to the overlap of the first and second deposition.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/
相关发明人
christoph bert
eike rietzel
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