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Pattern formation method and a method for manufacturing a semiconductor device
专利权人:
Masayuki Hatano
发明人:
Masayuki Hatano,Suigen Kyoh,Tetsuro Nakasugi
申请号:
US12882944
公开号:
US08118585B2
申请日:
2010.09.15
申请国别(地区):
US
年份:
2012
代理人:
摘要:
In one embodiment, a pattern formation method is disclosed. The method can place a liquid resin material on a workpiece substrate. The method can press a template against the resin material and measuring distance between a lower surface of a projection of the template and an upper surface of the workpiece substrate. The template includes a pattern formation region and a circumferential region around the pattern formation region. A pattern for circuit pattern formation is formed in the pattern formation region and the projection is formed in the circumferential region. The method can form a resin pattern by curing the resin material in a state of pressing the template. In addition, the method can separate the template from the resin pattern.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/
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