A semiconductor device having a novel buried junction architecture. The semiconductor device may have three terminals and a drift region between two of the terminals. The drift region includes an upper drift layer, a lower drift layer, and a buried junction layer between the upper and lower drift layers, wherein the upper and lower drift layers have a first type of doping. The buried junction layer comprises an interspersed pattern of a first material and a second material, the first material having a second type of doping opposite the first type of doping and the second material having the first type of doping and having a different doping concentration than the upper and lower drift layers.
