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Plasma electrode device and method for manufacturing the same
专利权人:
LG ELECTRONICS INC.
发明人:
Jaesoo Jang,Bongjo Sung
申请号:
US14660126
公开号:
US09646806B2
申请日:
2015.03.17
申请国别(地区):
US
年份:
2017
代理人:
摘要:
Provided are a plasma electrode device and a manufacturing method thereof. The plasma electrode device includes a first substrate including a first substrate main body having a first flow hole through which air flows and a first discharge electrode disposed on one surface of the first substrate main body and a second substrate disposed on one side of the first substrate, the second substrate including a second flow hole through which air flows and a second discharge electrode acting with the first substrate. The first substrate main body includes a ground electrode acting with the first or second discharge electrode to perform plasma discharge and a first insulator coupled to the ground electrode.
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