Aspects of the technology described herein relate to an ultrasound device including a first die that includes an ultrasonic transducer, a first application-specific integrated circuit (ASIC) that is bonded to the first die and includes a pulser, and a second ASIC in communication with the second ASIC that includes integrated digital receive circuitry. In some embodiments, the first ASIC may be bonded to the second ASIC and the second ASIC may include analog processing circuitry and an analog-to-digital converter. In such embodiments, the second ASIC may include a through-silicon via (TSV) facilitating communication between the first ASIC and the second ASIC. In some embodiments, SERDES circuitry facilitates communication between the first ASIC and the second ASIC and the first ASIC includes analog processing circuitry and an analog-to-digital converter. In some embodiments, the technology node of the first ASIC is different from the technology node of the second ASIC.本文中所描述之技術的態樣係關於一種超音波裝置，其包括：一第一晶粒，其包括一超音波換能器；一第一特殊應用積體電路（ASIC），其結合至該第一晶粒且包括一脈衝器；及一第二ASIC，其與該第二ASIC通信，該第二ASIC包括積體數位接收電路系統。在一些具體實例中，該第一ASIC可結合至該第二ASIC且該第二ASIC可包括類比處理電路系統及一類比至數位轉換器。在此等具體實例中，該第二ASIC可包括促進該第一ASIC與該第二ASIC之間的通信的一矽穿孔（TSV）。在一些具體實例中，SERDES電路系統促進該第一ASIC與該第二ASIC之間的通信，且該第一ASIC包括類比處理電路系統及一類比至數位轉換器。在一些具體實例中，該第一ASIC之技術節點不同於該第二ASIC之技術節點。
