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Manufacturing method for semiconductor device and manufacturing apparatus for semiconductor device
专利权人:
Masaki Kamimura
发明人:
Masaki Kamimura,Kenichi Yoshino
申请号:
US12929364
公开号:
US08420555B2
申请日:
2011.01.19
申请国别(地区):
US
年份:
2013
代理人:
摘要:
A manufacturing method for a semiconductor device including: determining pattern dependency of a radiation factor of an element forming surface of one wafer having a predetermined pattern formed on the wafer determining a heating surface of the wafer, based on the pattern dependency of the radiation factor holding the one wafer having the determined heating surface and another wafer having a determined heating surface, spaced at a predetermined distance in such a manner that non-heating surfaces of the one wafer and the another wafer oppose to each other and heating the each heating surface of the one wafer and the another wafer.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/
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