Shaviv Roey,Ostrowski Kirk,Cheung David,Park Joon,Thedjoisworo Bayu,Lord Patrick J.
申请号：
US201213590083
公开号：
US9613825(B2)
申请日:
2012.08.20
申请国别(地区):
美国
年份:
2017
代理人:
Weaver Austin Villeneuve & Sampson LLP
摘要：
Provided herein are methods and apparatus of hydrogen-based photoresist strip operations that reduce dislocations in a silicon wafer or other substrate. According to various embodiments, the hydrogen-based photoresist strip methods can employ one or more of the following techniques: 1) minimization of hydrogen budget by using short processes with minimal overstrip duration, 2) providing dilute hydrogen, e.g., 2%-16% hydrogen concentration, 3) minimization of material loss by controlling process conditions and chemistry, 4) using a low temperature resist strip, 5) controlling implant conditions and concentrations, and 6) performing one or more post-strip venting processes. Apparatus suitable to perform the photoresist strip methods are also provided.
